Transistor Polarity
: N-Channel
Gate-Source Breakdown Voltage
: +/- 20 V
Configuration
: Single
Maximum Operating Temperature
: + 175 C
Mounting Style
: SMD/SMT
Packaging
: Tube
Drain-Source Breakdown Voltage
: 150 V
Continuous Drain Current
: 14 A
Resistance Drain-Source RDS (on)
: 0.15 Ohms
Package / Case
: TO-252AA
Features: • Ultra Low On-Resistance
- rDS(ON) = 0.150, VGS = 10V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™ Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating CurveSpecificationsDrain to Source Voltage (Note 1) .......................... V
DSS 150 V
Drain to Gate Voltage (R
GS = 20k) (Note 1) .................... V
DGR 150 V
Gate to Source Voltage ............................... V
GS ±20 V
Drain Current
Continuous(T
C= 25, V
GS= 10V)(Figure 2) ........................I
D14 A
Continuous (T
C= 100, V
GS= 10V) (Figure 2) ......................I
D10 A
Pulsed Drain Current ................................I
DM Figure 4
Pulsed Avalanche Rating ...........................ULS Figure6,14,15
Power Dissipation .....................................P
D85W
Derate Above 25 ..................................0.57 W/
Operating and Storage Temperature ...................T
J, T
STG -55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s ......................T
L 300
Package Body for 10s, See Techbrief 334 ......................T
pkg 260
NOTE:
1. T
J = 25 to 150
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
.
Parameters: Technical/Catalog Information | HUFA75823D3S |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 150V |
Current - Continuous Drain (Id) @ 25° C | 14A |
Rds On (Max) @ Id, Vgs | 150 mOhm @ 14A, 10V |
Input Capacitance (Ciss) @ Vds | 800pF @ 25V |
Power - Max | 85W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 54nC @ 20V |
Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | HUFA75823D3S HUFA75823D3S |