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HUF75631S3S

MOSFET 100V NCh PowerMOSFET UltraFET

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SeekIC No. : 00161008 Detail

HUF75631S3S: MOSFET 100V NCh PowerMOSFET UltraFET

HUF75631S3S Data Sheet

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Part Number:
HUF75631S3S
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 33 A
Resistance Drain-Source RDS (on) : 0.04 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Continuous Drain Current : 33 A
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Packaging : Tube
Package / Case : TO-263
Resistance Drain-Source RDS (on) : 0.04 Ohms


Features:

• Ultra Low On-Resistance
- rDS(ON) = 0.040, VGS = 10V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™ Electrical Models
- Spice and SABER Thermal Impedance Models
- www.intersil.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve


Specifications

Drain to Source Voltage (Note 1) VDSS 100 V
Drain to Gate Voltage (RGS = 20k) (Note 1)

VDGR

 100 V
Gate to Source Voltage VGS ±20 V
Drain Current
Continuous (TC= 25oC, VGS = 10V) (Figure 2)		 ID 33 A
Continuous (TC= 100oC, VGS = 10V) (Figure 2) ID 23 A
Pulsed Drain Current IDM Figure 4  
Pulsed Avalanche Rating UIS Figures 6, 14, 15  
Power Dissipation PD 120 W
Derate Above 25oC   0.80 W/oC
Operating and Storage Temperature TJ, TSTG -55 to 175 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s		 TL 300 oC
Package Body for 10s, See Techbrief TB334 Tpkg 260 oC



Parameters:

Technical/Catalog InformationHUF75631S3S
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C33A
Rds On (Max) @ Id, Vgs40 mOhm @ 33A, 10V
Input Capacitance (Ciss) @ Vds 1220pF @ 25V
Power - Max120W
PackagingTube
Gate Charge (Qg) @ Vgs79nC @ 20V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HUF75631S3S
HUF75631S3S



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