HS-303RH-T

• QML Class T, Per MIL-PRF-38535
• Radiation Performance
- Gamma Dose () 1 x 10⁵ RAD(Si)
• No Latch-Up, Dielectrically Isolated Device Islands
• Pin for Pin Compatible with Intersil HI-303 Series AnalogSwitches
• Analog Signal Range 15V
• Low Leakage . . . . . . . . . . . . . . . . 100nA (Max, Post Rad)
• Low r_ON. . . . . . . . . . . . . . . . . . . . . . 60(Max, Post Rad)
• Low Operating Power . . . . . . . . . . 100A (Max, Post Rad)

Intersil's Satellite Applications Flow ^TM (SAF) devices contains HS-303RH-T are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended to meet the cost and shorter lead-time needs of large volume satellite manufacturers, while maintaining a high level of reliability.

The HS-303RH-T analog switch is a monolithic device fabricated using Radiation Hardened CMOS technology and the Intersil dielectric isolation process for latch-up free operation. Improved total dose hardness is obtained by layout (thin oxide tabs extending to a channel stop) and processing (hardened gate oxide). HS-303RH-T offers lowresistance switching performance for analog voltages up to the supply rails. "ON" resistance is low and stays reasonably constant over the full range of operating voltage and current. "ON" resistance also stays reasonably constant when exposed to radiation, being typically 30 pre-rad and 35 post 100kRAD(Si). Break-before-make switching is controlled by 5V digital inputs.