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HGT5A27N120BN

Features: • 72A, 1200V, TC = 25oC• 1200V Switching SOA Capability• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC• Short Circuit Rating• Low Conduction Loss• Thermal Impedance SPICE Model Temperature Compensating SABER™ Model www.fair...

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SeekIC No. : 004362124 Detail

HGT5A27N120BN: Features: • 72A, 1200V, TC = 25oC• 1200V Switching SOA Capability• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC• Short Circuit Rating• Low Condu...

HGT5A27N120BN Data Sheet

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HGT5A27N120BN
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5000

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Product Details

Description



Features:

• 72A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Thermal Impedance SPICE Model Temperature Compensating SABER™ Model www.fairchildsemi.com
• Avalanche Rated


Specifications

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 1200 V
Collector Current Continuous
At TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 72 A
At TC = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 34 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM 216 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . .VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM ±30 V
Switching Safe Operating Area at TJ = 150 (Figure 2) . . . .SSOA 150A at 1200V
Power Dissipation Total at TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . .  PD 500 W
Power Dissipation Derating TC > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . .4.0 W/
Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . EAV 135 mJ
Operating and Storage Junction Temperature Range . . . . TJ, TSTG -55 to 150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . .TL 260
Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . tSC 8 s
Short Circuit Withstand Time (Note 3) at VGE = 12V. . . . . . . . . . . . . . . tSC 15 s


Description

The HGTG27N120BN and HGT5A27N120BN are Non- Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

The HGTG27N120BN and HGT5A27N120BN IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.Formerly Developmental Type TA49280.




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