Transistor Output Optocouplers Hi Volt Phototrans
H11D2M: Transistor Output Optocouplers Hi Volt Phototrans
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Input Type : | DC | Maximum Collector Emitter Voltage : | 300 V | ||
Maximum Collector Emitter Saturation Voltage : | 0.4 V | Isolation Voltage : | 5300 Vrms | ||
Current Transfer Ratio : | 20 % | Maximum Forward Diode Voltage : | 1.5 V | ||
Maximum Collector Current : | 100 mA | Maximum Power Dissipation : | 300 mW | ||
Maximum Operating Temperature : | + 100 C | Minimum Operating Temperature : | - 40 C | ||
Package / Case : | PDIP-6 | Packaging : | Bulk |
Symbol | Parameter | Device | Value | Units |
TOTAL DEVICE | ||||
TSTG | Storage Temperature | All | -55 to +150 | |
TOPR | Operating Temperature | All | -40 to +100 | |
TSOL | Lead Solder Temperature (Wave Solder) | All | 260 for 10 sec | |
PD | Total Device Power Dissipation @ TA= 25 Derate Above 25 |
All | 260 | mW |
3.5 | mW/ | |||
EMITTER | ||||
IF | Forward DC Current(1) | All | 80 | mA |
VR | Reverse Input Voltage(1) | All | 6.0 | V |
IF(pk) | Forward Current Peak (1s pulse, 300pps)(1) | All | 3.0 | A |
PD | LED Power Dissipation @ TA= 25(1) Derate Above 25 |
All | 150 | mW |
1.41 | mW/ | |||
DETECTOR | ||||
PD | Power Dissipation @ TA= 25 Derate linearly above 25 |
All | 300 | mW |
4.0 | mW/ | |||
VCER | Collector to Emitter Voltage(1) | MOC8204M | 400 | V |
H11D1M, H11D2M | 300 | |||
H11D3M | 200 | |||
4N38M | 80 | |||
VCBO | Collector Base Voltage(1) | MOC8204M | 400 | V |
H11D1M, H11D2M | 300 | |||
H11D3M | 200 | |||
4N38M | 80 | |||
VECO | Emitter to Collector Voltage(1) | H11D1M, H11D2M, H11D3M, MOC8204M |
7 | V |
IC | Collector Current (Continuous) | All | 100 | mA |
The H11DXM, 4N38M and MOC8204M are phototransistor- type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.
Technical/Catalog Information | H11D2M |
Vendor | Fairchild Optoelectronics Group |
Category | Isolators |
Voltage - Isolation | 5300Vrms |
Input Type | DC |
Output Type | Transistor with Base |
Current - Output / Channel | 100mA |
Voltage - Output | 300V |
Vce Saturation (Max) | 400mV |
Current Transfer Ratio (Min) | 20% @ 2mA |
Mounting Type | Through Hole |
Package / Case | 6-DIP Wide |
Packaging | Tube |
Number of Circuits | 1 - Single |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | H11D2M H11D2M |