H11D2M

Transistor Output Optocouplers Hi Volt Phototrans

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SeekIC No. : 00101832 Detail

H11D2M: Transistor Output Optocouplers Hi Volt Phototrans

floor Price/Ceiling Price

Part Number:
H11D2M
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Input Type : DC Maximum Collector Emitter Voltage : 300 V
Maximum Collector Emitter Saturation Voltage : 0.4 V Isolation Voltage : 5300 Vrms
Current Transfer Ratio : 20 % Maximum Forward Diode Voltage : 1.5 V
Maximum Collector Current : 100 mA Maximum Power Dissipation : 300 mW
Maximum Operating Temperature : + 100 C Minimum Operating Temperature : - 40 C
Package / Case : PDIP-6 Packaging : Bulk    

Description

Maximum Collector Emitter Saturation Voltage : 0.4 V
Maximum Forward Diode Voltage : 1.5 V
Maximum Operating Temperature : + 100 C
Minimum Operating Temperature : - 40 C
Packaging : Bulk
Maximum Power Dissipation : 300 mW
Input Type : DC
Maximum Collector Emitter Voltage : 300 V
Isolation Voltage : 5300 Vrms
Package / Case : PDIP-6
Maximum Collector Current : 100 mA
Current Transfer Ratio : 20 %


Features:


High voltage:
MOC8204M, BV CER = 400V
H11D1M, H11D2M, BV CER = 300V
H11D3M, BV CER = 200V

High isolation voltage:
7500 V AC peak, 1 second
Underwriters Laboratory (UL) recognized
File # E90700, Volume 2



Application

Power supply regulators
Digital logic inputs
Microprocessor inputs
Appliance sensor systems
Industrial controls



Pinout

  Connection Diagram


Specifications

Symbol Parameter Device Value Units
TOTAL DEVICE
TSTG Storage Temperature All -55 to +150
TOPR Operating Temperature All -40 to +100
TSOL Lead Solder Temperature (Wave Solder) All 260 for 10 sec
PD Total Device Power Dissipation @ TA= 25
Derate Above 25
All 260 mW
3.5 mW/
EMITTER
IF Forward DC Current(1) All 80 mA
VR Reverse Input Voltage(1) All 6.0 V
IF(pk) Forward Current Peak (1s pulse, 300pps)(1) All 3.0 A
PD LED Power Dissipation @ TA= 25(1)
Derate Above 25
All 150 mW
1.41 mW/
DETECTOR
PD Power Dissipation @ TA= 25
Derate linearly above 25
All 300 mW
4.0 mW/
VCER Collector to Emitter Voltage(1) MOC8204M 400 V
H11D1M, H11D2M 300
H11D3M 200
4N38M 80
VCBO Collector Base Voltage(1) MOC8204M 400 V
H11D1M, H11D2M 300
H11D3M 200
4N38M 80
VECO Emitter to Collector Voltage(1) H11D1M, H11D2M,
H11D3M,
MOC8204M
7 V
IC Collector Current (Continuous) All 100 mA
Note:
1. Parameters meet or exceed JEDEC registered data (for 4N38M only).



Description

The H11DXM, 4N38M and MOC8204M are phototransistor- type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.




Parameters:

Technical/Catalog InformationH11D2M
VendorFairchild Optoelectronics Group
CategoryIsolators
Voltage - Isolation5300Vrms
Input TypeDC
Output TypeTransistor with Base
Current - Output / Channel100mA
Voltage - Output300V
Vce Saturation (Max)400mV
Current Transfer Ratio (Min)20% @ 2mA
Mounting TypeThrough Hole
Package / Case6-DIP Wide
PackagingTube
Number of Circuits1 - Single
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names H11D2M
H11D2M



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