FQU5N60C Selling Leads, Price trend, FQU5N60C DataSheet download, circuit diagram from SeekIC.com

Features: • 2.8A, 600V, RDS(on) = 2.5 @VGS = 10 V• Low gate charge ( typical 15 nC)• Low Crss ( typical 6.5 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilityApplication Symbol Parameter FQD5N60C/FQU5N60C Units VDSS ...

Product Details

Description

Features:

• 2.8A, 600V, RDS(on) = 2.5 @VGS = 10 V
• Low gate charge ( typical 15 nC)
• Low Crss ( typical 6.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

Application

Symbol		Parameter		FQD5N60C/FQU5N60C	Units
VDSS		Drain-Source Voltage		600	V
ID		Drain Current	- Continuous (TC = 100°C)	2.8	A
			- Continuous (TC = 25°C)	1.8	A
IDM		Drain Current Pulsed (Note 1)		11.2	A
VGSS		Gate-Source Voltage		± 30	V
EAS		Single Pulsed Avalanche Energy (Note 2)		210	mJ
IAR		Avalanche Current (Note 1)		4.9	A
EAR		Repetitive Avalanche Energy (Note 1)		4.5	mJ
dv/dt		Peak Diode Recovery dv/dt (Note 3)		2.5	V/ns
PD TJ, TSTG	Power Dissipation (TC = 25°C) - Derate above 25°C			49	W
				0.39	W/°C
	Operating and Storage Temperature Range			-55 to +150	°C
TL		Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds		300	°C

Specifications

Symbol		Parameter		FQD5N60C/FQU5N60C	Units
V_DSS		Drain-Source Voltage		600	V
I_D		Drain Current	- Continuous (TC = 100°C)	2.8	A
			- Continuous (TC = 25°C)	1.8	A
I_DM		Drain Current Pulsed (Note 1)		11.2	A
V_GSS		Gate-Source Voltage		± 30	V
E_AS		Single Pulsed Avalanche Energy (Note 2)		210	mJ
I_AR		Avalanche Current (Note 1)		4.9	A
E_AR		Repetitive Avalanche Energy (Note 1)		4.5	mJ
d _v/dt		Peak Diode Recovery dv/dt (Note 3)		2.5	V/ns
P_D T_{J, TSTG}	Power Dissipation (TC = 25°C) - Derate above 25°C			49	W
				0.39	W/°C
	Operating and Storage Temperature Range			-55 to +150	°C
T_L		Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds		300	°C

Description

These N-Channel enhancement mode power field effect transistors of FQU5N60C are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology of FQU5N60C has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQU5N60C is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

FQU5N60C

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