IGBT Transistors Dl 600V Size 3 N-Ch
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V |
Collector-Emitter Saturation Voltage : | 1.95 V | Maximum Gate Emitter Voltage : | +/- 20 V |
Gate-Emitter Leakage Current : | +/- 250 nA | Power Dissipation : | 167 W |
Maximum Operating Temperature : | + 150 C | Package / Case : | TO-263AB-3 |
Packaging : | Tube |
Symbol | Parameter | Ratings | Units |
BVCES | Collector to Emitter Breakdown Voltage | 600 | V |
IC25 | Collector Current Continuous, TC = 25°C | 45 | A |
IC110 | Collector Current Continuous, TC = 110°C | 20 | A |
ICM | Collector Current Pulsed (Note 1) | 108 | A |
VGES | Gate to Emitter Voltage Continuous | ±20 | V |
VGEM | Gate to Emitter Voltage Pulsed | ±30 | V |
SSOA | Switching Safe Operating Area at TJ = 150°C, Figure 2 | 60A at 600V | |
EAS | Pulsed Avalanche Energy, ICE = 12A, L = 2mH, VDD = 50V | 150 | mJ |
PD | Power Dissipation Total TC = 25°C | 167 | W |
Power Dissipation Derating TC > 25°C | 1.33 | W/°C | |
TJ | Operating Junction Temperature Range | -55 to 150 | °C |
TSTG | Storage Junction Temperature Range | -55 to 150 | °C |
The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and ava-anche capability (UIS). These LGC FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D shorten delay imes, and reduce the power requirement of the gate drive.
FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are ideally suited for high voltage switched mode power supply applications where low conduction oss, fast switching times and UIS capability are essential.SMPS II LGC FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D have been specially designed for: