FDS8934A

MOSFET SO-8 DUAL P-CH -20V

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SeekIC No. : 00160830 Detail

FDS8934A: MOSFET SO-8 DUAL P-CH -20V

floor Price/Ceiling Price

Part Number:
FDS8934A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 20 V
Gate-Source Breakdown Voltage : - 8 V Continuous Drain Current : 4 A
Resistance Drain-Source RDS (on) : 0.055 Ohms Configuration : Dual Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Continuous Drain Current : 4 A
Gate-Source Breakdown Voltage : - 8 V
Resistance Drain-Source RDS (on) : 0.055 Ohms


Features:

-4 A , -20 V, = 0.055 W @ VGS = -4.5 V, R DS(ON)              
                   = 0.072 W @ VGS = -2.5 V. R DS(ON)
High density cell design for extremely low R DS(ON)
High power and current handling capability in a widely used surface mount package.
Dual MOSFET in surface mount package. 



Pinout

  Connection Diagram




Specifications

Symbol Parameter Ratings Units
VDSS Drain-Source Voltage -20 V
VGSS Gate-Source Voltage ±8 V
ID Drain Current - Continuous (Note 1a)
- Pulsed
-4 A
-20
PD Power Dissipation for Dual Operation (Note 1)
2 W
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
1.6
1
0.9
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 W
Thermal Characteristics      
RJA Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
78 °C/W
40
       



Description

SO-8  P-Channel enhancement mode power field effect transistors FDS8934A are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices FDS8934A are particularly suited for low voltage applications such as notebook computer power management  and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.




Parameters:

Technical/Catalog InformationFDS8934A
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 P-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C4A
Rds On (Max) @ Id, Vgs55 mOhm @ 4A, 4.5V
Input Capacitance (Ciss) @ Vds 1130pF @ 10V
Power - Max900mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs28nC @ 5V
Package / CaseSO-8
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDS8934A
FDS8934A



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