EN29F002AN

Features:

•  5.0V ± 10% for both read/write operation
 
•  Read Access Time
-  45ns, 55ns, 70ns, and 90ns
•  Fast Read Access Time
-  70ns with Cload = 100pF 
-  45ns, 55ns with Cload = 30pF
 
•  Sector Architecture: 
   One 16K byte Boot Sector, Two 8K byte Parameter Sectors, one 32K byte and three 64K byte main Sectors
 
•  Boot Block Top/Bottom Programming Architecture
•  High performance program/erase speed
-  Byte program time:  10µs typical
-  Sector erase time:  500ms typical
-  Chip erase time:  3.5s typical  
•  Low Standby Current
-  1µA CMOS standby current-typical
-  1mA TTL standby current            
•  Low Power Active Current
-  30mA active read current
-  30mA program / erase current
 
•  JEDEC Standard program and erase commands 
•  JEDEC standard DATA polling and toggle bits feature
•  Hardware RESET  Pin   (n/a on EN29F002AN)
•  Single Sector and Chip Erase
•  Sector Protection / Temporary Sector Unprotect (RESET = VID)
•  Sector Unprotect Mode
•  Embedded Erase and Program Algorithms
•  Erase Suspend  / Resume modes:  Read and program another sector during   Erase Suspend Mode
•  0.23 µm triple-metal double-poly triple-well CMOS Flash Technology  
•  Low Vcc write inhibit < 3.2V  
•  100K endurance cycle
•  Package Options
-  32-pin PDIP
-  32-pin PLCC
-  32-pin TSOP (Type 1)
•  Commercial and Industrial Temperature Ranges


Pinout




Specifications

Storage Temperature
              Plastic Packages . . . . . . . .  . . . . . . . . . 65°C to +125°C
Ambient Temperature 
              with Power Applied. . . . . . . . . .   . . . . . 55°C to +125°C
Voltage with Respect to Ground 
               V_CC (Note 1) . . . . . . . . . . . . .  . .  .. . . . . . . 0.5 V to 7.0 V
               A9, OE# (Note 2) . . . . . . . . . . . . .  . .  . . . 0.5 V to 11.5 V
               All other pins (Note 1) . . . . . . . . . . . . .  0.5 V to Vcc+0.5V
Output Short Circuit Current (Note 3) . . . .  . .  . .  . .  . . . . . . . 200 mA 
 


Description

The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the  2M of memory is arranged in seven sectors (withtop/bottom configuration), including one 16K Byte Boot Sector, two 8K Byte Parameter sectors, and four main sectors (one 32K Byte and three 64K Byte).  Any byte can be programmed typically at 10µs.  The EN29F002A / EN29F002AN features 5.0V voltage read and write operation.  The access times are as fast as 45ns to eliminate the need for WAIT states in high-performance microprocessor systems.

The EN29F002A / EN29F002AN has separate Output Enable ( OE), Chip Enable ( CE), and Write Enable ( WE) controls which eliminate bus contention issues.   This device is designed to allow either single sector or full chip erase operation, where each sector can be individually protected against program/erase operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K program/erase cycles on each sector