BR93LC66FV

Features:

• Low power CMOS Technology
• 256 x16 bit configuration
• 2.7V to 5.5V operation
• Low power dissipation
3mA (max.) active current: 5V
5mA (max.) standby current: 5V
• Auto increment for efficient data bump
• Automatic erase-before-write
• Hardware and software write protection
Default to write-disable state at power up
Software instructions for write-enable / disable
Vcc lockout inadvertent write protection
• 8-pin SOP / 8-pin SSOP-B / 8-pin DIP packages
• Device status signal during write cycle
• TTL compatible Input / Output
• 100,000 ERASE / write cycles
• 10 years Data Retention


Pinout

Specifications

Parameter		Symbol	Limits	Unit
Applied voltage		Vcc	0.3 ~ + 6.5	V
Power dissipation	BR93LC66	Pd	500*1	mW
	BR93LC66F / RF		350*2
	BR93LC66FV		300*3
Storage temperature		Tstg	65 ~ + 125	°C
Operating temperature		Topr	40 ~ + 85	°C
Terminal voltage		-	0.3 ~ Vcc + 0.3	V

*1 Reduced by 5.0mW for each increase in Ta of 1°C over 25°C.
*2 Reduced by 3.5mW for each increase in Ta of 1°C over 25°C.
*3 Reduced by 3.0mW for each increase in Ta of 1°C over 25°C.


Description

The BR93LC66 series are CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed electrically. Each is configured of 256 words ´ 16 bits (4096 bits), and each word can be accessed individually and data read from it and written to it.

Operation control of BR93LC66FV is performed using five types of commands. The commands, addresses, and data are input through the DI pin under the control of the CS and SK pins. In a write operation, the internal status signal (READY or BUSY) can be output from the DO pin.