BF 543

The BF 543 is a Silicon N Channel MOS FET Triode.

Features of the BF 543 are:(1)For RF stages up to 300 MHz preferably in FM applications;(2)IDSS = 4 mA, gfs = 12 mS.

The absolute maximum ratings of the BF 543 can be summarized as:(1)Drain-source voltage:20 V;(2)Drain current:30 mA;(3)Gate-source peak current:10mA;(4)Total power dissipation, TA £ 60 °C:200 mW;(5)Storage temperature range: 55 . + 150 °C;(6)Channel temperature:150 °C;(7)Ambient temperature range: 55 . + 150°C.

The electrical characteristics at TA= 25 °C (unless otherwise specified) of the BF 543 can be summarized as:(1)Drain-source breakdown voltage ID = 10 mA, VGS = 4 V:20V;(2)Gate-source breakdown voltage± IGS = 10 mA, VDS = 0:7 to 12V;(3)Gate cutoff current ± VGS = 6 V, VDS = 0:50nA;(4)Drain current VDS = 10 V, VGS = 0:2.0 to 6.0 mA;(5)Gate-source pinch-off voltage VDS = 10 V, ID = 20 mA:1.5V.