Features: * 1.8 ± 0.1 V power supply and HSTL I/O * DLL circuitry for wide output data valid window and future frequency scaling * Separate independent read and write data ports * DDR read or write operation initiated each cycle * Pipelined double data rate operation * Separate data input/output b...
44324365: Features: * 1.8 ± 0.1 V power supply and HSTL I/O * DLL circuitry for wide output data valid window and future frequency scaling * Separate independent read and write data ports * DDR read or write ...
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Tapes & Mastics DBL COATED VINYL FM 1X72YDS WHITE
Parameter | Symbol | Conditions | MIN. | TYP. | MAX. | Unit |
Supply voltage | VDD | 0.5 | +2.5 | V | ||
Output supply voltage | VDDQ | 0.5 | VDD | V | ||
Input voltage | VIN | 0.5 | VDD + 0.5 (2.5 V MAX.) | V | ||
Input / Output voltage | VI/O | 0.5 | VDDQ + 0.5 (2.5 V MAX.) | V | ||
Operating ambient temperature | TA | 0 | 70 | |||
Storage temperature | Tstg | 55 | +125 |
The PD44324085 is a 4,194,304-word by 8-bit, the PD44324095 is a 4,194,304-word by 9-bit, the PD44324185 is a 2,097,152-word by 18-bit and the PD44324365 is a 1,048,576-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. The PD44324085, PD44324095, PD44324185 and PD44324365 integrate unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (K and /K) are latched on the positive edge of K and /K. These PD44324365 are suitable for application which require synchronous operation, high speed, low voltage, high density and wide bit configuration. These PD44324365 are packaged in 165-pin PLASTIC FBGA.