Features: · High DC current gain. hFE = 1200 (Typ.)· High emitter-base voltage. VEBO = 12V (Min.)·Low VCE(sat) VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)Specifications Parameter Symbol Limits Unit Collector-base voltage VCBO 25 V Collector-emitter voltage VC...
2SD2144S: Features: · High DC current gain. hFE = 1200 (Typ.)· High emitter-base voltage. VEBO = 12V (Min.)·Low VCE(sat) VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)Specifications Parameter Symbol...
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Parameter |
Symbol |
Limits |
Unit | |
Collector-base voltage |
VCBO |
25 |
V | |
Collector-emitter voltage |
VCEO |
20 |
V | |
Emitter-base voltage |
VEBO |
12 |
V | |
Collector current |
IC
|
0.5 |
A | |
1 |
A(Pulse)(1) | |||
Collector power dissipation | 2SD2114K |
PC
|
0.2 |
W |
2SD21144S |
0.3 | |||
Junction temperature |
Tj |
150 |
||
Storage temperature |
Tstg |
-55~+150 |