Transistors Bipolar (BJT) HIGH-CURRENT SWITCHING
2SC5888: Transistors Bipolar (BJT) HIGH-CURRENT SWITCHING
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Parameter |
Symbol |
Conditions |
Ratings |
Unit |
Collector-to-Base Voltage |
VCBO |
(--50)60 |
V | |
Collector-to-Emitter Voltage |
VCEO |
(--)50 |
V | |
Emitter-to-Base Voltage |
VEBO |
(--)6 |
V | |
Collector Current |
IC |
(--)10 |
A | |
Collector Current (Pulse) |
ICP |
(--)13 |
A | |
Base Current |
IB |
(--)2 |
A | |
Collector Dissipation |
PC |
2 |
W | |
Tc=25°C |
25 |
W | ||
Junction Temperature |
Tj |
150 |
°C | |
Storage Temperature |
Tstg |
--55 to +150 |
°C |
Absolute maximum ratings | |
---|---|
VCEO [V] | 50 |
IC [A] | 10 |
PC Tc=25°C [W] | 25 |
Electrical characteristics | |
---|---|
hFE min | 200 |
hFE max | 700 |
VCE [V] | 2 |
IC [A] | 1 |
VCE (sat) max [V] | 0.36 |
IC [A] | 5 |
IB [A] | 0.25 |
fT typ [MHz] | 200 |