2SC4138

Here is the description about 2SC4138 of the isc Silicon NPN Power Transistor which is designed for switching regulator and general purpose applications.
Here are the features: High Collector-Emitter Breakdown Voltage: High Switching Speed; High Reliability.
Here are the absolute Maximum Ratings (TA = 25). Collector-Base Voltage is 500V. Collector-Emitter Voltage is 400V. Emitter-Base voltage is 10V. Collector Current-Continuous is 10A. Collector Current-Peak is 20A. Base Current-Continuous is 4A. Collector Power Dissipation is 80W. Junction Temperature of 2SC4138 is 150. Storage Temperature Range is from -55 to 150.
Here are the ELECTRICAL CHARACTERISTICS (Tc=25 unless otherwise specified) Collector-Emitter Breakdown Voltage is 400V. Collector-Emitter Saturation Voltage is 0.5V. Base-Emitter Saturation Voltage is 1.3V. Collector Cutoff Current is 0.1mA. Emitter Cutoff Current is 0.1mA. DC Current Gain is from 10 to 30. Output Capacitance is type85. Current-Gain-Bandwidth Product is type10.
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