Features: ` Low VCE(sat).VCE(sat) = 0.15V (Typ.)(IC / IB = 1A / 0.2A)` High breakdown voltage.VCEO = 400V` Fast switching.tr = 1.0s(IC = 0.8A)Specifications Parameter Symbol Limits Unit Collector-base volltage VCBO 400 V Collector-emitter voltage VCEO 400 V ...
2SC3969: Features: ` Low VCE(sat).VCE(sat) = 0.15V (Typ.)(IC / IB = 1A / 0.2A)` High breakdown voltage.VCEO = 400V` Fast switching.tr = 1.0s(IC = 0.8A)Specifications Parameter Symbol Limits Uni...
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Parameter |
Symbol |
Limits |
Unit | |
Collector-base volltage |
VCBO |
400 |
V | |
Collector-emitter voltage |
VCEO |
400 |
V | |
Emitter-base voltage |
VEBO |
7 |
V | |
Collector current |
IC |
2 |
A(DC) | |
ICP |
4 |
A(Pulse)(1) | ||
Collector power atiodissipn | 2SC3969 |
PC
|
2 |
w |
20 |
W(TC=25) | |||
2SC5161 |
1 |
W | ||
10 |
W(TC=25) | |||
Junction temperature |
Tj |
150 |
||
Storage temperature |
Tstg |
-55~+150 |
Here is the description about 2SC3969 of the isc Silicon NPN Power Transistor, designed for switching regulator applications. It is With TO-220C package. It is high voltage. And it is high speed switching.
Its absolute maximum ratings are at Ta = 25°C ambient temperature unless otherwise specified. The Collector-Emitter Voltage (VCEO )is 400V. The Collector-Base Voltage(VCBO)is 400V.The Emitter-Base Voltage (VEBO )is 7V. The collector Current-Continuous is 2A. The Collector Current-peak is 4A.Its junction temperature is 150°C. Its storage temperature is from -55°C to +150°C.
And these are the Electrical Characteristics of 2SC3969(Ta =25°C). The Collector-Emitter Breakdown Voltage is from 400Vdc to Max. The Collector-Base Breakdown Voltage is from 500 Vdc to Max. The Emitter-Base Breakdown Voltage is from 7.0 Vdc to Max. The Collector cut-off current is from min to 10uA. The Emitter cut-off current is from min to10uA. The Collector-emitter saturation voltage is from min to 1.0V. The Base-emitter saturation voltage is from min to 1.5V. The DC current gain is from 25 to max 50.
Its features are these: Low Collector Saturation Voltage; High Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V (Min); High Switching Speed.
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