Features: SpecificationsDescription Here is the description about 2SC3930W of the NPN Silicon Epitaxital Planar Transistor. Its absolute maximum ratings are at Ta = 25°C ambient temperature unless otherwise specified. The Collector-Emitter Voltage (VCEO )is 30V. The Collector-Base Voltage(VCBO)is...
2SC3930W: Features: SpecificationsDescription Here is the description about 2SC3930W of the NPN Silicon Epitaxital Planar Transistor. Its absolute maximum ratings are at Ta = 25°C ambient temperature unless ...
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Here is the description about 2SC3930W of the NPN Silicon Epitaxital Planar Transistor.
Its absolute maximum ratings are at Ta = 25°C ambient temperature unless otherwise specified. The Collector-Emitter Voltage (VCEO )is 30V. The Collector-Base Voltage(VCBO)is 20V.The Emitter-Base Voltage (VEBO )is 5.0V. The collector Current-continuous is 30mA. The Collector dissipation is 150mW.Its junction temperature is from -55°C to +150°C. Its storage temperature is from -55°C to +150°C.
And here are the Electrical Characteristics of 2SC3930W(Ta =25°C). The Collector-Emitter Breakdown Voltage is from 20Vdc to Max. The Collector-Base Breakdown Voltage is from 30 Vdc to Max. The Emitter-Base Breakdown Voltage is from 5.0 Vdc to Max. The Collector cut-off current is from min to0.1uA. The Emitter cut-off current is from min to 0.1uA. The DC Collector gain is from 70 to 220.
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