2N6344A

On-State RMS Current (It RMS) :
Rated Repetitive Off-State Voltage VDRM : 600 V
Gate Trigger Current (Igt) : 50 mA
Mounting Style : Through Hole
Package / Case : TO-220AB
Off-State Leakage Current @ VDRM IDRM : 0.01 mA
Gate Trigger Voltage (Vgt) : 2 V
Packaging : Box
Holding Current (Ih Max) : 40 mA
Breakover Current IBO Max : 100 A


Specifications

Rating	Symbol	Value	Unit
* Peak Repetitive OffState Voltage(1) (Gate Open, TJ = 40 to +110°C) 1/2 Sine Wave 50 to 60 Hz, Gate Open 2N6344, 2N6344A, 2N6348 2N6349	VDRM	600 800	Volts
*RMS OnState Current (TC = +80°C) 2N6344, 2N6349 Full Cycle Sine Wave 50 to 60 Hz (TC = +90°C) (TC = +80°C) 2N6344A, 2N6348A (TC = +90°C)	IT(RMS)	8 4 12 6	Amps
*RMS OnState Current (TC = +80°C) 2N6344, 2N6349 Full Cycle Sine Wave 50 to 60 Hz (TC = +90°C) (TC = +80°C) 2N6344A, 2N6348A (TC = +90°C)	ITSM	100	Amps
Circuit Fusing (t = 8.3 ms)	I2t	40	A2s
*Peak Gate Power (TC = +80°C, Pulse Width = 2 ms)	PGM	20	Watts
*Average Gate Power (TC = +80°C, t = 8.3 ms)	PG(AV)	0.5	Watt
*Peak Gate Current	IGM	2	Amps
*Peak Gate Voltage	VGM	10	Volts
*Operating Junction Temperature Range	TJ	40 to +125	°C
*Storage Temperature Range	Tstg	40 to +150	°C

1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.


Parameters:

Technical/Catalog Information	2N6344A
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Triac Type	Standard
Configuration	Single
Voltage - Off State	600V
Current - On State (It (RMS)) (Max)	12A
Voltage - Gate Trigger (Vgt) (Max)	2V
Current - Gate Trigger (Igt) (Max)	50mA
Current - Hold (Ih) (Max)	40mA
Current - Non Rep. Surge 50, 60Hz (Itsm)	100A @ 60Hz
Mounting Type	Through Hole
Package / Case	TO-220AB
Packaging	Bulk
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2N6344A 2N6344A 2N6344AOS ND 2N6344AOSND 2N6344AOS