2N5886

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
DC Collector/Base Gain hfe Min : 20
Collector- Emitter Voltage VCEO Max : 80 V
Packaging : Bulk
Maximum DC Collector Current : 25 A
Maximum Operating Frequency : 4 MHz
Package / Case : TO-3


Application

·They are intended for use in power linear and switching applications




Specifications

SYMBOL	PARAMETER		CONDITIONS	VALUE	UNIT
VCBO	Collector-base voltage	2N5885	Open emitter	60	V
		2N5886		80
VCEO	Collector-emitter voltage	2N5885	Open base	60	V
		2N5886		80
VEBO	Emitter-base voltage		Open collector	5	V
IC	Collector current			25	A
ICM	Collector current-peak			50	A
IB	Base current			7.5	A
PD	Total power dissipation		TC=25	200	W
Tj	Junction temperature			200
Tstg	Storage temperature			-65~200

Description

·With TO-3 package
·Complement to type 2N5883 2N5884
·High power dissipations

2N5886   


Parameters:

Technical/Catalog Information	2N5886
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	25A
Power - Max	200W
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 10A, 4V
Vce Saturation (Max) @ Ib, Ic	1V @ 1.5A, 15A
Frequency - Transition	4MHz
Current - Collector Cutoff (Max)	2mA
Mounting Type	Chassis Mount
Package / Case	TO-204, TO-3
Packaging	Tray
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2N5886 2N5886 2N5886OS ND 2N5886OSND 2N5886OS