2N5880

Transistor Polarity :
Collector- Emitter Voltage VCEO Max :
Emitter- Base Voltage VEBO :
Maximum DC Collector Current :
DC Collector/Base Gain hfe Min :
Configuration :
Maximum Operating Frequency :
Maximum Operating Temperature :
Mounting Style :
Package / Case :
Packaging : Tube


Application

·For general-purpose power amplifier and switching applications




Specifications

SYMBOL	PARAMETER		CONDITIONS	VALUE	UNIT
VCBO	Collector-base voltage	2N5879	Open emitter	-60	V
		2N5880		-80
VCEO	Collector-emitter voltage	2N5879	Open base	-60	V
		2N5880		-80
VEBO	Emitter-base voltage		Open collector	-5	V
IC	Collector current			-15	A
ICM	Collector current-peak			-30	A
IB	Base current			-5	A
PD	Total power dissipation		TC=25	160	W
Tj	Junction temperature			150
Tstg	Storage temperature			-65~200

Description

·With TO-3 package
·Low collector saturation voltage
·Complement to type 2N5881 2N5882
2N5880