2N5878

Configuration :
Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Collector- Emitter Voltage VCEO Max : 80 V
Maximum DC Collector Current : 10 A
Maximum Operating Frequency : 4 MHz
DC Collector/Base Gain hfe Min : 35
Package / Case : TO-3
Packaging : Sleeve


Application

·For general-purpose power amplifier and switching applications




Specifications

SYMBOL	PARAMETER		CONDITIONS	VALUE	UNIT
VCBO	Collector-base voltage	2N5877 2N5878	Open emitter	60 80	V
VCEO	Collector-emitter voltage	2N5877 2N5878	Open base	60 80	V
VEBO	Emitter-base voltage		Open collector	5	V
IC	Collector current			10	A
ICM	Collector current-peak			20	A
IB	Base current			4	A
PD	Total power dissipation		TC=25	150	W
Tj	Junction temperature			200
Tstg	Storage temperature			-65~200

Description

·With TO-3 package
·Low collector saturation voltage
·Complement to type 2N5875 2N5876

2N5878