2N4427

Transistor Polarity : NPN
Collector- Emitter Voltage VCEO Max : 20 V
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 2 V
Packaging : Box
Maximum Operating Frequency : 500 MHz
Package / Case : TO-39
Maximum DC Collector Current : 0.4 A
DC Collector/Base Gain hfe Min : 10 at 100 mA at 5 V


Application

· The transistors are intended for use in output, driver orpre-driver stages in VHF and UHF equipment.




Description

NPN overlay transistors in TO-39 metal packages with the collector connected to the case. The 2N4427 is primarily intended for class-A, B or C amplifiers, frequency multiplier and oscillator circuits.

The 2N4427 is designed as one kind of RF & microwave discrete low power transistors for VHF and UHF equipment. Applications include amplifier, pre-driver, driver and output stages. Also suitable for oscillator and frequency-multiplier functions.

2N4427 has four features. (1)Silicon NPN, TO-39 packaged VHF/UHF transistor. (2)1W minimum power output at 175MHz. (3)500MHz current gain bandwidth product at 50mA. (4)Power gain Gpe=10dB min at 175MHz. Those are all the main features.

Some absolute maximum ratings of 2N4427 have been concluded into several points as follow. (1)Its collector to emitter voltage would be 20Vdc. (2)Its collector to base voltage would be 40Vdc. (3)Its emitter to base voltage would be 2.0Vdc. (4)Itd collector current would be 400mA. (5)Its total device dissipation at Ta=25°C would be 1.0W and derate above 25°C would be 5.71mW/°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of 2N4427 are concluded as follow. (1)Its collector to emitter sustaining voltage would be min 40Vdc. (2)Its collector to emitter sustaining voltage would be min 20V. (3)Its collector cutoff current would be max 20uA with conditions of Vce=12V and Ib=0 and it would be max 100uA with conditions of Vce=40Vdc and Vbe=-1.5Vdc. (4)Its emitter cutoff current would be max 100uA with conditions of Veb=2.0Vdc and Ic=0. (5)Its DC current gain would be min 10 and max 200 with conditions of Ic=100mA and Vce=5V and would be min 5 with conditions of Ic=360mA and Vce=5. (6)Its collector to emitter saturation voltage would be max 0.5V. (7)Its output capacitance would be typ 4.0pF. (8)Its current-gain bandwidth product would be min 500MHz. (9)Its power gain would be min 10dB. (10)Its output power would be min 1.0W. (11)Its collector efficiency would be min 45%. And so on. If you have any question or suggestion or want to know more information about 2N4427 please contact us for details. Thank you!