1N5408-G

Series: -
Diode Type: Standard
Current - Average Rectified (Io) (per Diode): -
Diode Configuration: -
Mounting Type: Through Hole
Packaging: Cut Tape (CT)
Voltage - DC Reverse (Vr) (Max): 1000V (1kV)
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: -
Current - Average Rectified (Io): 3A
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Manufacturer: Comchip Technology
Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A


Features:

Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability


Specifications

CHARACTERISTICS	SYMBOL	1N 5400-G	1N 5401-G	1N 5402-G	1N 5404-G	1N 5406-G	1N 5407-G	1N 5406-G	UNIT
Maximum Recurrent Peak Reverse Voltage	VRRM	50	100	200	400	600	800	1000	V
Maximum RMS Volts	VRMS	35	70	140	280	420	580	700	V
Maximum DC Blocking Voltage	VDC	50	100	200	400	600	800	1000	V
Max. Average Forward Rectified Current@ TL = 75ºC	I(AV)	3.0							A
Peak Forward Surge Current 8.3ms Single half-sine-wave superimposed on rated load (JEDEC Method)	IFSM	150							A
Max. Instantaneous Forward Voltage @ 3.0A	VF	0.95							V
Maximum DC Reverse Current@TJ=25	IR	5.0							uA
at Rated DC Blocking Voltage@TJ=100		250							uA
Typical Junction Capacitance (Note 1)	CJ	40							pF
Tyical Thermal Resistance (Note2)	RJA	15							/W
Operating Junction and Storage Temperature Range	TJ, TSTG	-55 to +125