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12SQ100

Features: Guard ring for transient protectionLow power loss,high efficiencyHigh current capability,low VFHigh surge capacityMetal of silicon rectifier , majority carrier conductionFor use in low voltage,high frequency inverters,free wheeling,and polarity protection applicationsSpecifications ...

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SeekIC No. : 004209162 Detail

12SQ100: Features: Guard ring for transient protectionLow power loss,high efficiencyHigh current capability,low VFHigh surge capacityMetal of silicon rectifier , majority carrier conductionFor use in low vol...

12SQ100 Data Sheet

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Part Number:
12SQ100
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Guard ring for transient protection
Low power loss,high efficiency
High current capability,low VF
High surge capacity
Metal of silicon rectifier , majority carrier conduction
For use in low voltage,high frequency inverters,free wheeling,and polarity protection applications


Specifications

Symbol Type Number 12SQ030
 12SQ035 12SQ040 12SQ045

12SQ050

 12SQ060 12SQ080 12SQ0100 UNITS
VRRM Maximum Recur rent Peak Reverse Vol tage 30 35 40 45 50 60 80 100 V
VRMS Maximum RMS Vol tage 21 24.5 28 31.5 35 42 56 70 V
VDC Maximum DC Blocki ng Vol tage 30 35 40 45 50 60 80 100 V
I(AV) Maximum Average Forward
Rectified Current ( See Fig.1) @TC=95 		12 A
IFSM Peak Forward Surge Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load (JEDEC Method)		 275 A
VF Peak Forward Voltage at 10.0A DC (Note1) 0.55 0.7 0.8 V
IR Maximum DC Reverse Current @TJ=25
at Rated DC Bolcking Voltage @TJ=100		 0.5
50		 mA
CJ Typical Junction Capacitance (Note2) 450 pF
RJC Typical Thermal Resistance (Note3)
 3.0 /W
TJ Operating Temperature Range -55 to +200
TSTG Storage Temperature Range -55 to +200
NOTES:1.300us Pulse Width, 2%Duty Cycle.
2.Measured at 1.0 MHZ and applied reverse voltage of 4.0VDC.
3.Thermal Resistance Junction to case.


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