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ZXTS1000E6

Features: • Low Saturation Transistor• High Gain - 300 minimum• Low VF, fast switching SchottkyApplication• Mobile telecomms, PCMCIA & SCSI• DC-DC ConversionPinoutSpecifications Part Number ZXTS1000E6 Product Type PNP + Schottky VCEO(V) -1240 I...

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SeekIC No. : 004552740 Detail

ZXTS1000E6: Features: • Low Saturation Transistor• High Gain - 300 minimum• Low VF, fast switching SchottkyApplication• Mobile telecomms, PCMCIA & SCSI• DC-DC ConversionPinoutS...

ZXTS1000E6 Data Sheet

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Part Number:
ZXTS1000E6
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• Low Saturation Transistor
• High Gain - 300 minimum
• Low VF, fast switching Schottky




Application

• Mobile telecomms, PCMCIA & SCSI
• DC-DC Conversion




Pinout

Connection Diagram




Specifications

Part Number ZXTS1000E6
Product Type PNP + Schottky
VCEO(V) -12
40
IC(A) -1.25
0.5
ICM (A) -3
PD (W) 0.9
0.9
hFE Min 200
@ IC (A) -0.5
VCE (SAT) Max (mV) -175
@ IC (A) -0.5
@ IB (mA) -10
VFMax (V) -
0.5
@ IF(A) -
1
RCE(sat) (m) 160
Spicemodel


PARAMETER SYMBOL
VALUE
UNIT
Transistor
Collector-Base Voltage VCBO
-12
V
Collector-Emitter Voltage VCEO
-12
V
Emitter-Base Voltage VEBO
-5
V
Continuous Collector Current IC
-1.25
A
Schottky Diode
Continuous Reverse Voltage VR
40
V
Forward Current IF
0.5
A
Non Repetitive Forward Current t100µs
t 10ms		 IFSM
6.75
3
A
A
Package
Power Dissipation at Tamb=25°C
single die "on"
both die "on"		 PD
0.725
0.885
W
W
Storage Temperature Range Tstg
-55 to +150
Junction Temperature Tj
125





Description

A PNP transistor and a Schottky Barrier diode of the ZXTS1000E6 contained in a single 6 leaded SOT23 package.




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