Features: • Low Saturation Transistor• High Gain - 300 minimum• Low VF, fast switching SchottkyApplication• Mobile telecomms, PCMCIA & SCSI• DC-DC ConversionPinoutSpecifications Part Number ZXTS1000E6 Product Type PNP + Schottky VCEO(V) -1240 I...
ZXTS1000E6: Features: • Low Saturation Transistor• High Gain - 300 minimum• Low VF, fast switching SchottkyApplication• Mobile telecomms, PCMCIA & SCSI• DC-DC ConversionPinoutS...
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Part Number | ZXTS1000E6 |
Product Type | PNP + Schottky |
VCEO(V) | -12 40 |
IC(A) | -1.25 0.5 |
ICM (A) | -3 |
PD (W) | 0.9 0.9 |
hFE Min | 200 |
@ IC (A) | -0.5 |
VCE (SAT) Max (mV) | -175 |
@ IC (A) | -0.5 |
@ IB (mA) | -10 |
VFMax (V) | - 0.5 |
@ IF(A) | - 1 |
RCE(sat) (m) | 160 |
Spicemodel |
PARAMETER | SYMBOL |
VALUE |
UNIT |
Transistor | |||
Collector-Base Voltage | VCBO |
-12 |
V |
Collector-Emitter Voltage | VCEO |
-12 |
V |
Emitter-Base Voltage | VEBO |
-5 |
V |
Continuous Collector Current | IC |
-1.25 |
A |
Schottky Diode | |||
Continuous Reverse Voltage | VR |
40 |
V |
Forward Current | IF |
0.5 |
A |
Non Repetitive Forward Current t100µs t 10ms |
IFSM |
6.75 3 |
A A |
Package | |||
Power Dissipation at Tamb=25°C single die "on" both die "on" |
PD |
0.725 0.885 |
W W |
Storage Temperature Range | Tstg |
-55 to +150 |
|
Junction Temperature | Tj |
125 |