Features: • High power dissipation SOT23 package• High peak current• Low saturation voltage• 7V reverse blocking voltageApplication• MOSFET and IGBT gate driving• DC - DC converters• Motor drive• High side driver• Load disconnect switchSpecific...
ZXTP25100CFH: Features: • High power dissipation SOT23 package• High peak current• Low saturation voltage• 7V reverse blocking voltageApplication• MOSFET and IGBT gate driving•...
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Features: •2 Amps continuous current•Up to 5 Amps peak current•Very low saturati...
US $.51 - .87 / Piece
Transistors Bipolar (BJT) 200V PNP Low Vce 2A Ic Vceo -200V
Features: • 2 Amps continuous current• Up to 5 Amps peak current• Very low satur...
SYMBOL | PARAMETER | RATING | UNIT |
VCBO | Collector to base voltage | -115 | V |
VCEO | Collector to emitter voltage | -100 | V |
VCEO | Emitter-collector voltage (reverse blocking) | -7 | V |
VEBO | Emitter to base voltage | -7 | V |
IC | Continuous collector current(c) | -1 | A |
ICM | Peak pulse current | -3 | A |
IB | Base current | -500 | A |
PD | Power dissipation at Tamb =25(a) Linear derating factor |
0.73 5.84 |
W mW/ |
PD | Power dissipation at Tamb =25(b) Linear derating factor |
1.05 8.4 |
W mW/ |
PD | Power dissipation at Tamb =25(c) Linear derating factor |
1.25 9.6 |
W mW/ |
PD | Power dissipation at Tamb =25(d) Linear derating factor |
1.81 14.5 |
W mW/ |
Tj | Junction temperature | 150 | |
Tstg | Storage temperaturerange | -55 to +150 |
Advanced process capability and package design of the ZXTP25100CFH have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.