Features: • High power dissipation SOT23 package• High peak current• Low saturation voltage• 140V forward blocking voltaget• 7V reverse blocking voltageApplication• MOSFET and IGBT gate driving• DC - DC converters• Motor drive• Relay, lamp, and...
ZXTP25100BFH: Features: • High power dissipation SOT23 package• High peak current• Low saturation voltage• 140V forward blocking voltaget• 7V reverse blocking voltageApplication̶...
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Features: •2 Amps continuous current•Up to 5 Amps peak current•Very low saturati...
US $.51 - .87 / Piece
Transistors Bipolar (BJT) 200V PNP Low Vce 2A Ic Vceo -200V
Features: • 2 Amps continuous current• Up to 5 Amps peak current• Very low satur...
Part Number | ZXTP25100BFH |
Product Type | PNP |
VCEO (V) | -100 |
IC (A) | -2 |
ICM (A) | -5 |
PD (W) | 1.25 |
hFE Min | 100 15 |
hFE Max | 300 |
@ IC (A) | -0.01 -2 |
VCE (SAT) Max (mV) | -130 -295 |
@ IC (A) | -1 -2 |
@ IB (mA) | -100 -200 |
fT Min (MHz) | 200 |
RCE (SAT) (m) | 108 |
Parameter |
Symbol |
Limit |
Unit |
Collector-base voltage |
VCBO |
-140 |
V |
Collector-Emitter voltage (forward blocking) |
VCEX |
-140 |
V |
Collector-Emitter voltage |
VCEO |
-100 |
V |
Emitter-collector voltage (reverse blocking) |
VECX |
-7 |
V |
Emitter-base voltage |
VEBO |
-7 |
V |
Continuous collector current(c) |
IC |
-2 |
A |
Peak pulse current |
ICM |
-515 |
A |
Power dissipation at TA=25(a) Linear derating factor |
PD |
0.73 5.84 |
W mW/ |
Power dissipation at TA =25(b) Linear derating factor |
PD |
1.05 8.4 |
W mW/ |
Power dissipation at TA =25(c) Linear derating factor |
PD |
1.25 9.6 |
W mW/ |
Power dissipation at TA =25(d) Linear derating factor |
PD |
1.81 14.5 |
W mW/ |
Operating and storage temperature range |
Tj, Tstg |
-55 to 150 |
Advanced process capability and package design of the ZXTP25100BFH have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.