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ZXTP25060BFH

Features: • Higher power dissipation SOT23 package• High peak current• Low saturation voltage• 100V forward blocking voltage• 7V reverse blocking voltageApplication• MOSFET gate drivers• Power switches• Motor controlPinoutSpecifications Part Num...

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SeekIC No. : 004552732 Detail

ZXTP25060BFH: Features: • Higher power dissipation SOT23 package• High peak current• Low saturation voltage• 100V forward blocking voltage• 7V reverse blocking voltageApplicationR...

ZXTP25060BFH Data Sheet

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Part Number:
ZXTP25060BFH
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/7

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Product Details

Description



Features:

• Higher power dissipation SOT23 package
• High peak current
• Low saturation voltage
• 100V forward blocking voltage
• 7V reverse blocking voltage




Application

• MOSFET gate drivers
• Power switches
• Motor control




Pinout

Connection Diagram




Specifications

Part Number ZXTP25060BFH
Product Type PNP
VCEO (V) -60
IC (A) -3
ICM (A) -9
PD (W) 1.25
hFE Min 100
30
hFE Max 300
@ IC (A) -0.01
-3
VCE (SAT) Max (mV) -85
-235
@ IC (A) -1
-3
@ IB (mA) -100
-300
fT Min (MHz) 250
RCE (SAT) (m) 58


Parameter
Symbol
Limit
Unit
Collector-base voltage
VCBO
-100
V
Collector-emitter voltage (forward blocking)
VCEX
-100
V
Collector-emitter voltage
VCEO
-60
V
Emitter-collector voltage (reverse blocking)

VECO
-7
V
Emitter-base voltage
VEBO
-7
V
Continuous Collector current(a)
IC
-3
A
Peak pulse current
ICM
-9
A
Power dissipation @ TA =25(a)
Linear derating factor
PD
0.73
5.84
W
mW/
Power dissipation @ TA =25(b)
Linear derating factor
PD
1.05
8.4
W
mW/
Power dissipation @ TA =25(c)
Linear derating factor
PD
1.25
9.6
W
mW/
Power dissipation @ TA =25(d)
Linear derating factor
PD
1.81
14.5
W
mW/
Operating and storage temperature range
Tj, Tstg
-55 to +150





Description

Advanced process capability and package design of the ZXTP25060BFH have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.






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