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ZXTP25040DZ

Features: • High power dissipation SOT89 package• High peak current• Low saturation voltage• 3V reverse blocking voltageApplication• MOSFET and IGBT gate driving• DC - DC converters• Motor drive• High side driverPinoutSpecifications Parameter ...

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SeekIC No. : 004552731 Detail

ZXTP25040DZ: Features: • High power dissipation SOT89 package• High peak current• Low saturation voltage• 3V reverse blocking voltageApplication• MOSFET and IGBT gate driving•...

ZXTP25040DZ Data Sheet

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Part Number:
ZXTP25040DZ
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/7

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Product Details

Description



Features:

• High power dissipation SOT89 package
• High peak current
• Low saturation voltage
• 3V reverse blocking voltage




Application

• MOSFET and IGBT gate driving
• DC - DC converters
• Motor drive
• High side driver




Pinout

Connection Diagram




Specifications

Parameter
Symbol
Limit
Unit
Collector-Base voltage
VCBO
-45
V
Collector-Emitter voltage (forward blocking)
VCEO
-40
V
Emitter-Collector voltage (reverse blocking)
VECO
-7
V
Emitter-Base voltage

VEBO
-3
V
Continuous Collector current(c)
IC
-1
A
Peak pulse current
ICM
-9
A
Power dissipation at TA =25(a)
Linear derating factor
PD
1.1
8.8
W
mW/
Power dissipation at TA =25(b)
Linear derating factor
PD
1.8
14.4
W
mW/
Power dissipation at TA =25(c)
Linear derating factor
PD
2.4
19.2
W
mW/
Power dissipation at TA =25(d)
Linear derating factor
PD
4.46
35.7
W
mW/
Power dissipation at TC =25(e)
Linear derating factor
PD
15.7
126
W
mW/
Operating and storage temperature range
Tj, Tstg
-55 to 150


Part Number ZXTP25040DZ
Product Type PNP
VCEO (V) -40
IC(A) -3
ICM (A) -9
PD (W) 2.4
hFE Min 300
20
hFE Max 900
@I C (A) -0.01
-3.5
VCE(SAT) Max (mV) -90
-350
@ IC (A) -1
-3.5
@ IB (mA) -100
-350
fT Min (MHz) 270
RCE (SAT) (m) 55





Description

Advanced process capability and package design of the ZXTP25040DZ have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.






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