Features: • High peak current• Low saturation voltage• 40V forward blocking voltageApplication• MOSFET and IGBT gate driving• Low power DC-DC conversionPinoutSpecifications Part Number ZXTP25040DFL Product Type PNP VCEO (V) -40 IC(A) -1.5 ICM ...
ZXTP25040DFL: Features: • High peak current• Low saturation voltage• 40V forward blocking voltageApplication• MOSFET and IGBT gate driving• Low power DC-DC conversionPinoutSpecificat...
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Features: •2 Amps continuous current•Up to 5 Amps peak current•Very low saturati...
US $.51 - .87 / Piece
Transistors Bipolar (BJT) 200V PNP Low Vce 2A Ic Vceo -200V
Features: • 2 Amps continuous current• Up to 5 Amps peak current• Very low satur...
Part Number | ZXTP25040DFL |
Product Type | PNP |
VCEO (V) | -40 |
IC(A) | -1.5 |
ICM (A) | -5 |
PD (W) | 0.35 |
hFE Min | 300 15 |
hFE Max | 900 |
@I C (A) | -0.01 -1.5 |
VCE(SAT) Max (mV) | -95 -190 |
@ IC (A) | -0.5 -1.5 |
@ IB (mA) | -20 -75 |
fT Min (MHz) | 270 |
RCE (SAT) (m) | 82 |
Parameter | Symbol | Limit | Unit |
Collector-base voltage | VCBO | -45 | V |
Collector-emitter voltage (forward blocking) | VCEO | -40 | V |
Emitter-collector voltage (reverse blocking) | VECO | -3 | V |
Emitter-base voltage | VEBO | -7 | V |
Continuous collector current(a) | IC | -1.5 | A |
Base current | IB | -0.5 | A |
Peak pulse current | ICM | -5 | A |
Power dissipation at Tamb =25(a) Linear derating factor |
PD | 350 2.8 |
mW mW/ |
Operating and storage temperature range | Tj, Tstg | -55 to 150 |
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
Advanced process capability of the ZXTP25040DFL has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents.