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ZXTP25020DFL

Features: • High peak current• Low saturation voltageApplication• DC-DC converters• MOSFET and IGBT gate drivingSpecifications SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage -25 V VCEO Collector to emitter voltage -25 V VCEO Emitter-coll...

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SeekIC No. : 004552726 Detail

ZXTP25020DFL: Features: • High peak current• Low saturation voltageApplication• DC-DC converters• MOSFET and IGBT gate drivingSpecifications SYMBOL PARAMETER RATING UNIT VCBO C...

ZXTP25020DFL Data Sheet

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Part Number:
ZXTP25020DFL
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• High peak current
• Low saturation voltage




Application

• DC-DC converters
• MOSFET and IGBT gate driving




Specifications

SYMBOL PARAMETER RATING UNIT
VCBO Collector to base voltage -25 V
VCEO Collector to emitter voltage -25 V
VCEO Emitter-collector voltage (reverse blocking) -4 V
VEBO Emitter to base voltage -7 V
IC Continuous collector current(c) -1.5 A
ICM Peak pulse current -500 A
IB Base current -6 A
PD Power dissipation at Tamb =25(d)
Linear derating factor		 350
2.8
W
mW/
Tj Junction temperature 150
Tstg Storage temperaturerange -55 to +150





Description

Advanced process capability of the ZXTP25020DFL has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents.






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