Features: • 20V PNP• Very low saturation voltage• 7V reverse blocking capability• High pulse current• Low profile SOT23F packageApplication• Mobile phone charging circuits• Disconnect switch in portable products• High side driving• Motor contro...
ZXTP25020CFF: Features: • 20V PNP• Very low saturation voltage• 7V reverse blocking capability• High pulse current• Low profile SOT23F packageApplication• Mobile phone charging...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: •2 Amps continuous current•Up to 5 Amps peak current•Very low saturati...
US $.51 - .87 / Piece
Transistors Bipolar (BJT) 200V PNP Low Vce 2A Ic Vceo -200V
Features: • 2 Amps continuous current• Up to 5 Amps peak current• Very low satur...
Part Number | ZXTP25020CFF |
Product Type | PNP |
VCEO(V) | -20 |
IC (A) | -4.5 |
ICM (A) | -10 |
PD (W) | 1.5 |
hFE Min | 200 150 |
hFE Max | 500 |
@ IC (A) | -0.01 -1 |
VCE (SAT) Max (mV) | -110 -185 |
@ IC (A) | -1 -2 |
@ IB (mA) | -20 -40 |
fT Min (MHz) | 285 |
RCE (SAT) (m) | 41 |
Parameter |
Symbol |
Limit |
Unit |
Collector-base voltage |
VCBO |
-25 |
V |
Collector-emitter voltage |
VCEO |
-20 |
V |
Emitter-collector voltage (reverse blocking) |
VECO |
-7 |
V |
Emitter-base voltage |
VEBO |
-7 |
V |
Continuous collector current(c) |
IC |
-4.5 |
A |
Base current |
IB |
-1 |
A |
Peak pulse current |
ICM |
-10 |
A |
Power dissipation at Tamb =25(a) Linear derating factor |
PD |
0.79 6.3 |
W mW/ |
Power dissipation at Tamb =25(b) Linear derating factor |
PD |
1.13 9 |
W mW/ |
Power dissipation at Tamb =25(c) Linear derating factor |
PD |
1.50 12.0 |
W mW/ |
Power dissipation at Tamb =25(d) Linear derating factor |
PD |
1.96 15.7 |
W mW/ |
Operating and storage temperature range |
Tj, Tstg |
-55 to 150 |
Advanced process capability and packaging maximise the power handling and performance of this small outline transistor of the ZXTP25020CFF. The reverse blocking capability of the transistor can often result in the elimination of a series connected Schottky diode commonly required with either bipolar transistors or MOSFETs when used in battery charging applications.