ZXTP25015DFH

Series: -
Resistor - Base (R1) (Ohms): -
Current - Collector Cutoff (Max): -
Resistor - Emitter Base (R2) (Ohms): -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)Alternate Packaging
Transistor Type: PNP
Manufacturer: Diodes Inc
Supplier Device Package: SOT-23-3
Voltage - Collector Emitter Breakdown (Max): 15V
Power - Max: 1.25W
Current - Collector (Ic) (Max): 4A
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Vce Saturation (Max) @ Ib, Ic: 220mV @ 500mA, 5A
Frequency - Transition: 295MHz


Features:

• High power dissipation SOT23 package
• High peak current
• Low saturation voltage
• 15V forward blocking voltage
• 3V reverse blocking voltage




Application

MOSFET and IGBT gate driving
• DC - DC converters
• Motor drive
• High side driver
• Load disconnect switch




Pinout






Specifications

Part Number	ZXTP25015DFH
Product Type	PNP
VCEO(V)	-15
IC (A)	-4
ICM (A)	-10
PD (W)	1.25
hFE Min	300 90
hFE Max	900
@ IC (A)	-0.01 -4
VCE (SAT) Max (mV)	-55 -210
@ IC (A)	-1 -4
@ IB (mA)	-100 -200
fT Min (MHz)	295
RCE (SAT) (m)	33

Parameter	Symbol	Limit	Unit
Collector-base voltage	VCBO	-15	V
Collector-emitter voltage	VCEO	-15	V
Emitter-collector voltage (reverse blocking)	VECO	-3	V
Emitter-base voltage	VEBO	-7	V
Continuous collector current(b)	IC	-4	A
Base current	IB	-1	A
Peak pulse current	ICM	-10	A
Power dissipation at Tamb =25(a) Linear derating factor	PD	0.73 5.84	W mW/
Power dissipation at Tamb =25(b) Linear derating factor	PD	1.05 8.4	W mW/
Power dissipation at Tamb =25(d) Linear derating factor	PD	1.25 9.6	W mW/
Power dissipation at Tamb =25(d) Linear derating factor	PD	1.81 14.5	W mW/
Operating and storage temperature range	Tj, Tstg	-55 to 150

Description

Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor of the ZXTP25015DFH. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.