Features: • High power dissipation SOT23 package• High peak current• Very high gain, 500 minimum• Low saturation voltageApplication• MOSFET and IGBT gate driving• DC - DC converters• Motor drive• High side driver• Line disconnect switchSpecific...
ZXTP25012EFH: Features: • High power dissipation SOT23 package• High peak current• Very high gain, 500 minimum• Low saturation voltageApplication• MOSFET and IGBT gate driving•...
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Features: •2 Amps continuous current•Up to 5 Amps peak current•Very low saturati...
US $.51 - .87 / Piece
Transistors Bipolar (BJT) 200V PNP Low Vce 2A Ic Vceo -200V
Features: • 2 Amps continuous current• Up to 5 Amps peak current• Very low satur...
Part Number | ZXTP25012EFH |
Product Type | PNP |
VCEO(V) | -12 |
IC (A) | -4 |
ICM (A) | -10 |
PD (W) | 1.25 |
hFE Min | 500 300 |
hFE Max | 1500 |
@ IC (A) | -0.01 -1 |
VCE (SAT) Max (mV) | -260 -350 |
@ IC (A) | -1 -2 |
@ IB (mA) | -10 -40 |
fT Min (MHz) | 310 |
RCE (SAT) (m) | 40 |
SYMBOL | PARAMETER | RATING | UNIT |
VCBO | Collector to base voltage | -12 | V |
VCEO | Collector to emitter voltage | -12 | V |
VEBO | Emitter to base voltage | -7 | V |
IC | Continuous collector current(c) | -4 | A |
IB | Base current | -1 | A |
PD | Power dissipation at Tamb =25(a) Linear derating factor |
0.73 5.84 |
W mW/ |
PD | Power dissipation at Tamb =25(b) Linear derating factor |
1.05 8.4 |
W mW/ |
PD | Power dissipation at Tamb =25(c) Linear derating factor |
1.25 9.6 |
W mW/ |
PD | Power dissipation at Tamb =25(d) Linear derating factor |
1.81 14.5 |
W mW/ |
Tj | Junction temperature | 150 | |
Tstg | Storage temperaturerange | -55 to +150 |
Advanced process capability and package design have been used to maximise the power handling and performance of this small outline transistor of the ZXTP25012EFH. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.