Features: ·Low saturation voltage for reduced power dissipation ·1 to 2 amp high current capability ·Pb-free ·SOT23 packageApplication·Power MOSFET gate driving·Low loss power switchingPinoutSpecifications Part Number ZXTP2041F Product Type PNP VCEO (V) -40 IC(A) -1 ICM (A...
ZXTP2041F: Features: ·Low saturation voltage for reduced power dissipation ·1 to 2 amp high current capability ·Pb-free ·SOT23 packageApplication·Power MOSFET gate driving·Low loss power switchingPinoutSpecifi...
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US $.51 - .87 / Piece
Transistors Bipolar (BJT) 200V PNP Low Vce 2A Ic Vceo -200V
US $.39 - .65 / Piece
Transistors Bipolar (BJT) 200V PNP Low Vce 2A Ic 160mV Vce 2.4W
Part Number | ZXTP2041F |
Product Type | PNP |
VCEO (V) | -40 |
IC(A) | -1 |
ICM (A) | -2 |
PD (W) | 0.35 |
hFE Min | 300 160 |
hFE Max | 800 |
@I C (A) | -0.1 -1 |
VCE(SAT) Max (mV) | -200 -500 |
@ IC (A) | -0.1 -1 |
@ IB (mA) | -1 -100 |
fT Min (MHz) | 150 |
RCE (SAT) (m) | 350 |
Parameter |
Symbol | Limit | Unit |
Collector-base voltage |
VCBO |
-40 |
V |
Collector-emitter voltage |
VCEO |
-40 |
V |
Emitter-base voltage |
VEBO |
-5.0 |
V |
Peak pulse current |
ICM |
-2 |
A |
Continuous collector current* |
IC |
-1 |
A |
Peak base current |
IBM |
-1 |
A |
Power dissipation@TA =25 |
PD |
350 |
mW |
Operating and storage temperature |
Tj:Tstg | -55to+150 |
This transistor of the ZXTP2041F combines high gain, high current operation and low saturation voltage making it ideal for power MOSFET gate driving and low loss power switching.