Features: Low saturation voltage for reduced power dissipation 1 to 2 amp high current capability Pb-free SOT23 packageApplication Power MOSFET gate driving Low loss power switchingSpecifications Parameter Symbol Limit Unit Collector-base voltage VCBO -80 V Collector-emitter volt...
ZXTP2039F: Features: Low saturation voltage for reduced power dissipation 1 to 2 amp high current capability Pb-free SOT23 packageApplication Power MOSFET gate driving Low loss power switchingSpecifications ...
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Features: •2 Amps continuous current•Up to 5 Amps peak current•Very low saturati...
US $.51 - .87 / Piece
Transistors Bipolar (BJT) 200V PNP Low Vce 2A Ic Vceo -200V
Features: • 2 Amps continuous current• Up to 5 Amps peak current• Very low satur...
Parameter | Symbol | Limit | Unit |
Collector-base voltage | VCBO | -80 | V |
Collector-emitter voltage | VCEV | -80 | V |
Collector-emitter voltage | VCEO | -60 | V |
Emitter-base voltage | VEBO | -5.0 | V |
Peak pulse current | ICM | -2 | A |
Continuous collector current* | IC | -1 | A |
Peak base current | IBM | -1 | A |
Power dissipation @ TA=25°C* | PD | 350 | mW |
Operating and storage temperature | Tj:Tstg | -55 to +150 |
Part Number | ZXTP2039F |
Product Type | PNP |
VCEO (V) | -60 |
IC (A) | -1 |
ICM (A) | -2 |
PD (W) | 0.35 |
hFE Min | 100 80 |
hFE Max | 300 |
@ IC (A) | -0.5 -1 |
VCE (SAT) Max (mV) | -200 -300 |
@ IC (A) | -0.1 -0.5 |
@ IB (mA) | -2 -50 |
fT Min (MHz) | 150 |
RCE (SAT) (m) | - |
This transistor combines high gain of the ZXTP2039F, high current operation and low saturation voltage making it ideal for power MOSFET gate driving and low loss power switching.