Features: • Higher power dissipation SOT23 package• High peak current• Low saturation voltage• High gain• 50V forward blocking voltageApplication• MOSFET and IGBT gate driving• Motor drive• Relay, lamp and solenoid drive• High side switchesR...
ZXTP2025F: Features: • Higher power dissipation SOT23 package• High peak current• Low saturation voltage• High gain• 50V forward blocking voltageApplication• MOSFET and IGBT...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: •2 Amps continuous current•Up to 5 Amps peak current•Very low saturati...
US $.51 - .87 / Piece
Transistors Bipolar (BJT) 200V PNP Low Vce 2A Ic Vceo -200V
Features: • 2 Amps continuous current• Up to 5 Amps peak current• Very low satur...
Parameter |
Symbol |
Limit |
Unit |
Collector-base voltage |
VCBO |
-50 |
V |
Collector-emitter voltage |
VCEO |
-50 |
V |
Emitter-base voltage |
VEBO |
-7.0 |
V |
Peak pulse current |
ICM |
-10 |
A |
Continuous collector current (c) |
IC |
-5 |
A |
Base current |
IB |
-1.2 |
A |
Power dissipation @ TA=25 (a) Linear derating factor |
PD |
1.0 8.0 |
W mW/ |
Power dissipation @ TA=25 (b) Linear derating factor |
PD |
1.2 9.6 |
W mW/ |
Power dissipation @ TA=25 (c) Linear derating factor |
PD |
1.56 12.5 |
W mW/ |
Operating and storage temperature |
Tj,Tstg |
-55 to +150 |
Advanced process capability and package design of the ZXTP2025F have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.