Features: • Extremely low equivalent on-resistance; RSAT = 32mV at 5A• 4.3 amps continuous current• Up to 15 amps peak current• Very low saturation voltages• Excellent gain characteristics specified up to 10 ampsApplication• Emergency lighting circuits• Mo...
ZXTP2012Z: Features: • Extremely low equivalent on-resistance; RSAT = 32mV at 5A• 4.3 amps continuous current• Up to 15 amps peak current• Very low saturation voltages• Excellent ...
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Features: •2 Amps continuous current•Up to 5 Amps peak current•Very low saturati...
US $.51 - .87 / Piece
Transistors Bipolar (BJT) 200V PNP Low Vce 2A Ic Vceo -200V
Features: • 2 Amps continuous current• Up to 5 Amps peak current• Very low satur...
PARAMETER | SYMBOL | LIMIT | UNIT |
Collector-base voltage | BVCBO | -100 | V |
Collector-emitter voltage | BVCEO | -60 | V |
Emitter-base voltage | BVEBO | -7 | V |
Continuous collector current (a) | IC | -4.3 | A |
Peak pulse current | ICM | -15 | A |
Power dissipation at TA =25°C (a) Linear derating factor |
PD | 1.5 12 |
W mW/°C |
Power dissipation at TA =25°C (b) Linear derating factor |
PD | 2.1 16.8 |
W mW/°C |
Operating and storage temperature range | Tj, Tstg | -55 to +150 | °C |