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ZXTP2012G

Features: • Extremely low equivalent on-resistance; RSAT = 39mV at 5A• 5.5 amps continuous current• Up to 15 amps peak current• Very low saturation voltages• Excellent gain characteristics specified up to 10 AmpsApplication• DC - DC converters• MOSFET gate...

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SeekIC No. : 004552707 Detail

ZXTP2012G: Features: • Extremely low equivalent on-resistance; RSAT = 39mV at 5A• 5.5 amps continuous current• Up to 15 amps peak current• Very low saturation voltages• Excellent ...

ZXTP2012G Data Sheet

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Part Number:
ZXTP2012G
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• Extremely low equivalent on-resistance; RSAT = 39mV at 5A
• 5.5 amps continuous current
• Up to 15 amps peak current
• Very low saturation voltages
• Excellent gain characteristics specified up to 10 Amps




Application

• DC - DC converters
• MOSFET gate drivers
• Charging circuits
• Power switches
• Motor control




Pinout

Connection Diagram




Specifications

PARAMETER SYMBOL LIMIT UNIT
Collector-base voltage BVCBO -100 V
Collector-emitter voltage BVCEO -60 V
Emitter-base voltage BVEBO -7 V
Continuous collector current IC -5.5 A
Peak pulse current ICM -15 A
Power dissipation at TA =25°C (a)
Linear derating factor		 PD 3.0
24		 W
mW/°C
Power dissipation at TA =25°C (b)
Linear derating factor		 PD 1.6
12.8		 W
mW/°C
Operating and storage temperature range Tj, Tstg -55 to +150 °C





Description

Packaged in the ZXTP2012G outline this new low saturation 60V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.




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