Features: • Low profile SOT23F package• Low saturation voltage• High gain• High power dissipationApplication• Load switches• Battery charging• Motor driveSpecifications SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage -12 V VCEO...
ZXTP07012EFF: Features: • Low profile SOT23F package• Low saturation voltage• High gain• High power dissipationApplication• Load switches• Battery charging• Motor driveSp...
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Features: •2 Amps continuous current•Up to 5 Amps peak current•Very low saturati...
US $.51 - .87 / Piece
Transistors Bipolar (BJT) 200V PNP Low Vce 2A Ic Vceo -200V
Features: • 2 Amps continuous current• Up to 5 Amps peak current• Very low satur...
SYMBOL | PARAMETER | RATING | UNIT |
VCBO | Collector to base voltage | -12 | V |
VCEO | Collector to emitter voltage | -12 | V |
VEBO | Emitter to base voltage | -7 | V |
IC | Continuous collector current(c) | -4 | A |
ICP | Peak pulse current | -8 | A |
IB | Base current | -1 | A |
PD | Power dissipation at Tamb =25(a) Linear derating factor |
0.84 6.72 |
W mW/ |
PD | Power dissipation at Tamb =25(b) Linear derating factor |
1.34 10.72 |
W mW/ |
PD | Power dissipation at Tamb =25(c) Linear derating factor |
1.50 12.0 |
W mW/ |
PD | Power dissipation at Tamb =25(d) Linear derating factor |
2.0 16.0 |
W mW/ |
Tj | Junction temperature | 150 | |
Tstg | Storage temperaturerange | -55 to +150 |
Part Number | ZXTP07012EFF |
Product Type | PNP |
VCEO(V) | -12 |
IC (A) | -4 |
ICM (A) | -8 |
PD (W) | 1.5 |
hFE Min | 500 230 |
hFE Max | 1500 |
@ IC (A) | -0.01 -4 |
VCE (SAT) Max (mV) | -165 -350 |
@ IC (A) | -1 -2 |
@ IB (mA) | -5 -10 |
fT Min (MHz) | 100 |
RCE (SAT) (m) | 50 |
This low voltage PNP transistor ZXTP07012EFF has been designed for applications requiring high gain and very low saturation voltage. The SOT23F package is pin compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance.