Features: • Extemely low equivalent on-resistance; RSAT = 28m at 6.5A• 7 amps continuous current• Up to 20 amps peak current• Very low saturation voltages• Excellent hFE characteristics up to 20 ampsApplication• DC - DC converters• MOSFET gate drivers̶...
ZXTN2007G: Features: • Extemely low equivalent on-resistance; RSAT = 28m at 6.5A• 7 amps continuous current• Up to 20 amps peak current• Very low saturation voltages• Excellent hF...
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Part Number | ZXTN2007G |
Product Type | NPN |
VCEO (V) | 30 |
IC(A) | 7 |
ICM (A) | 20 |
PD (W) | 3 |
hFE Min | 100 100 |
hFE Max | 300 |
@I C (A) | 1 7 |
VCE(SAT) Max (mV) | 65 220 |
@ IC (A) | 1 6.5 |
@ IB (mA) | 20 300 |
fT Min (MHz) | 140 |
RCE (SAT) (m) | 28 |
PARAMETER |
SYMBOL |
LIMIT |
UNIT |
Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current (a) Peak pulse current Power dissipation at TA =25°C (a) Linear derating factor Power dissipation at TA =25°C (b) Linear derating factor Operating and storage temperature range |
BVCBO BVCEO BVEBO IC ICM PD PD Tj, Tstg |
80 30 7 7 20 3.0 24 1.6 12.8 -55 to +150 |
V V V A A W mW/°C W mW/°C °C |
Packaged in the SOT223 outline ZXTN2007G this new low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.