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ZXTDCM832

Features: • Low Equivalent On Resistance• Extremely Low Saturation Voltage (100mV @1A)• hFE characterised up to 6A• IC=4A Continuous Collector Current• 3mm x 2mm MLPApplication• DC - DC Converters• Charging circuits• CCFL Backlighting• Power sw...

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ZXTDCM832: Features: • Low Equivalent On Resistance• Extremely Low Saturation Voltage (100mV @1A)• hFE characterised up to 6A• IC=4A Continuous Collector Current• 3mm x 2mm MLPApp...

ZXTDCM832 Data Sheet

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Part Number:
ZXTDCM832
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low Equivalent On Resistance
• Extremely Low Saturation Voltage (100mV @1A)
• hFE characterised up to 6A
• IC=4A Continuous Collector Current
• 3mm x 2mm MLP




Application

• DC - DC Converters
• Charging circuits
• CCFL Backlighting
• Power switches
• Motor control




Pinout

Connection Diagram




Specifications

Part Number ZXTDCM832
Product Type NPN + NPN
VCEO (V) 50
IC(A) 4
ICM (A) 6
PD (W) 1.5
hFE Min 200
hFE Max -
@I C (A) 1
VCE(SAT) Max (mV) 100
@ IC (A) 1
@ IB (mA) 50
fT Min (MHz) 100
RCE (SAT) (m) 68


PARAMETER
SYMBOL
LIMIT
UNIT
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
7.5
V
Peak Pulse Current
ICM
6
A
Continuous Collector Current (a)(f)
IC
4
A
Base Current
IB
1000
mA
Power Dissipation at TA=25 (a)(f)
Linear Derating Factor
PD
1.5
12
W
mW/
Power Dissipation at TA=25 (b)(f)
Linear Derating Factor
PD
2.45
19.6
W
mW/
Power Dissipation at TA=25 (c)(f)
Linear Derating Factor
PD
1
8
W
mW/
Power Dissipation at TA=25 (d)(f)
Linear Derating Factor
PD
1.13
9
W
mW/
Power Dissipation at TA=25 (d)(g)
Linear Derating Factor
PD
1.7
13.6
W
mW/
Power Dissipation at TA=25 (e)(g)
Linear Derating Factor
PD
3
24
W
mW/
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150





Description

Packaged in the innovative 3mm x 2mm MLP (Micro Leaded Package) outline ZXTDCM832, these new 4th generation low saturation dual transistors offer extremely low on state losses making them ideal for use in DC-DC circuits and various driving and power management functions.

Additionally users gain several other key benefits:
Performance capability equivalent to much larger packges
Improved circuit efficiency & power levels
PCB area and device placement savings
Lower package height (nom 0.9mm)
Reduced component count






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