Features: • Low Equivalent On Resistance - NPN RCE(sat) 210mΩ at 1A- PNP RCE(sat) 355mΩ at -1A• Low Saturation Voltage• hFE characterised up to 2A• IC=1A Continuous Collector Current• SOT23-6 packageApplication• MOSFET gate driver• Low Power Mo...
ZXTD4591E6: Features: • Low Equivalent On Resistance - NPN RCE(sat) 210mΩ at 1A- PNP RCE(sat) 355mΩ at -1A• Low Saturation Voltage• hFE characterised up to 2A• IC=1A Continuo...
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Features: • Low Equivalent On Resistance• Low Saturation Voltage• IC=1A Continuo...
PARAMETER | SYMBOL | LIMIT NPN | LIMIT PNP | UNIT |
Collector-base voltage | BVCBO | 80 | -80 | V |
Collector-emitter voltage | BVCEO | 60 | -60 | V |
Emitter-base voltage | BVEBO | 5 | -5 | V |
Peak pulse current | ICM | 2 | -2 | A |
Continuous collector current | IC | 1 | -1 | A |
Base Current | IB | 500 | -500 | mA |
Power dissipation at TA =25°C (a) Linear derating factor |
PD | 1.1 8.8 |
1.1 8.8 |
W mW/°C |
Power dissipation at TA =25°C (b) Linear derating factor |
PD | 1.7 13.6 |
1.7 13.6 |
W mW/°C |
Operating and storage temperature range | Tj, Tstg | -55 to +150 | -55 to +150 | °C |
Part Number | ZXTD4591E6 |
Product Type | NPN + PNP |
VCEO (V) | 60 -60 |
IC (A) | 1 -1 |
ICM (A) | 2 -2 |
PD (W) | 1.1 |
hFE Min | 100 100 |
hFE Max | 300 300 |
@ IC (A) | 0.5 -0.5 |
VCE (SAT) Max (mV) | 250 -300 |
@ IC (A) | 0.5 -0.5 |
@ IB (mA) | 50 -50 |
fT Min (MHz) | 150 150 |
RCE (SAT) (m) | 210 355 |