Features: • Low Equivalent On Resistance• Extremely Low Saturation Voltage (-220mV@ -1A)• hFE specified up to -3A• IC= -3A Continuous Collector Current• 2mm x 2mm MLPApplication• DC - DC Converters (FET Driving)• Charging Circuits• Power switchesR...
ZXT3M322: Features: • Low Equivalent On Resistance• Extremely Low Saturation Voltage (-220mV@ -1A)• hFE specified up to -3A• IC= -3A Continuous Collector Current• 2mm x 2mm MLPAp...
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PARAMETER | SYMBOL |
LIMIT |
UNIT |
Collector-base voltage | VCBO |
-50 |
V |
Collector-emitter voltage | VCEO |
-40 |
V |
Emitter-base voltage | VEBO |
-7.5 |
V |
Peak Pulse Current | ICM |
-4 |
A |
Continuous Collector Current(a) | IC |
-3 |
A |
Base Current | IB |
-1000 |
mA |
Power Dissipation at TA=25°C(a) Linear Derating Factor |
PD |
1.5 12 |
W mW/ |
Power Dissipation at TA=25°C(b) Linear Derating Factor |
PD |
2.45 19.6 |
W mW/ |
Power Dissipation at TA=25°C(d) Linear Derating Factor |
PD |
1 8 |
W mW/ |
Power Dissipation at TA=25°C(e) Linear Derating Factor |
PD |
3 24 |
W mW/ |
Operating and Storage Temperature Range | Tj:Tstg |
-55 to +150 |
Packaged in the innovative 2mm x 2mm MLP (Micro Leaded Package) outline, this new 4th generation low saturation transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.
Additionally users will also gain several other key benefits of the ZXT3M322:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area and device placement savings
Lower package height (nom 0.9mm) ZXT3M322