Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• DPAK packageApplication• Motor drive• Disconnect switchesPinoutSpecifications Part Number ZXMP6A18K Config/ Polarity P PD(W) 10.1 VDSS(V) -60 VGSS ...
ZXMP6A18K: Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• DPAK packageApplication• Motor drive• Disconnect switchesPinoutSpecifica...
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Part Number | ZXMP6A18K |
Config/ Polarity |
P |
PD (W) |
10.1 |
VDSS (V) |
-60 |
VGSS (+/-) (V) |
20 |
ID (A) |
-10.4 |
RDS(on) Max() @ VGS; -2.5V | - |
RDS(on) Max() @ VGS; 4.0V | - |
RDS(on) Max() @ VGS; -4.5V | 0.08 |
RDS(on) Max() @ VGS; -5V | - |
RDS(on) Max() @ VGS; -10V | 0.055 |
VGS(th) (V) |
-1(Min) |
Ciss (typ) (pF) |
1580 |
Qg (typ) (nC) @ VGS; 10V |
44 |
Parameter | Symbol | Limit | Unit |
Drain-source voltage | VDSS | -60 | V |
Gate-source voltage | VGS | ±20 | V |
Continuous drain current @VGS=10V; TA=25°C (b) @VGS=10V; TA=70°C (b) @VGS=10V; TA=25°C (a) |
ID | -10.4 -8.3 -6.8 |
A A A |
Pulsed drain current (c) | IDM | -37.5 | A |
Continuous source current (body diode) (b) | IS | -11.5 | A |
Pulsed source current (body diode) (c) | ISM | -37.5 | A |
Power dissipation at TA =25°C (a) Linear derating factor |
PD | 4.3 34.4 |
W mW/°C |
Power dissipation at TA =25°C (b) Linear derating factor |
PD | 10.1 80.8 |
W mW/°C |
Power dissipation at TA =25°C (d) Linear derating factor |
PD | 2.15 17.2 |
W mW/°C |
Operating and storage temperature range | Tj:Tstg | -55 to +150 | °C |
NOTES:
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t 10 sec.
(c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300 s - pulse width limited by maximum junction temperature.
(d) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
This new generation of trench MOSFETs of the ZXMP6A18K from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.