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ZXMP6A18DN8

Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• Low profile SOIC packageApplication• Motor drive• Disconnect switchesPinoutSpecifications Part Number ZXMP6A18DN8 Config/ Polarity 2 x P PD(W) 2.1 VDSS(...

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ZXMP6A18DN8: Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• Low profile SOIC packageApplication• Motor drive• Disconnect switchesPin...

ZXMP6A18DN8 Data Sheet

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Part Number:
ZXMP6A18DN8
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package




Application

• Motor drive
• Disconnect switches




Pinout

Connection Diagram




Specifications

Part Number ZXMP6A18DN8
Config/
Polarity		 2 x P
PD
(W)		 2.1
VDSS
(V)		 -60
VGSS (+/-)
(V)		 20
ID
(A)		 -4.8
RDS(on) Max() @ VGS; -2.5V -
RDS(on) Max() @ VGS; 4.0V -
RDS(on) Max() @ VGS; -4.5V 0.08
RDS(on) Max() @ VGS; -5V -
RDS(on) Max() @ VGS; -10V 0.055
VGS(th)
(V)		 -1(Min)
Ciss (typ)
(pF)		 1580
Qg (typ) (nC)
@ VGS; 10V		 44


PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDSS -60 V
Gate Source Voltage VGS ± 20 V
Continuous Drain CurrentVGS=4.5V; TA=25°C (b)(d)
VGS=4.5V; TA=70°C (b)(d)
TA=25°C (a)(d)
 ID -4.8
-3.8
-3.7		 A
Pulsed Drain Current (c) IDM -23 A
Continuous Source Current (Body Diode) (b) IS -3.3 A
Pulsed source current (body diode) (c) ISM -23 A
Power Dissipation at TA=25°C (a) (d)
Linear Derating Factor		 PD 1.25
10		 W
mW/°C
Power Dissipation at TA=25°C (a) (e)
Linear Derating Factor		 PD 1.8
14		 W
mW/°C
Power Dissipation at TA=25°C (b) (d)
Linear Derating Factor		 PD 2.1
17		 W
mW/°C
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C





Description

This new generation of trench MOSFETs of the ZXMP6A18DN8 from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.






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