Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• Low profile SOIC packageApplication• DC - DC converters• Power management functions• Relay and solenoid driving• Motor controlPinoutSpecifications Part Num...
ZXMP6A13F: Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• Low profile SOIC packageApplication• DC - DC converters• Power managemen...
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Part Number | ZXMP6A13F |
Config/ Polarity |
P |
PD (W) |
0.8 |
VDSS (V) |
-60 |
VGSS (+/-) (V) |
20 |
ID (A) |
-1.1 |
RDS(on) Max() @ VGS; -2.5V | - |
RDS(on) Max() @ VGS; 4.0V | - |
RDS(on) Max() @ VGS; -4.5V | 0.6 |
RDS(on) Max() @ VGS; -5V | - |
RDS(on) Max() @ VGS; -10V | 0.4 |
VGS(th) (V) |
-1(Min) |
Ciss (typ) (pF) |
219 |
Qg (typ) (nC) @ VGS; 10V |
5.9 |
PARAMETER | SYMBOL | LIMIT | UNIT |
Drain-Source Voltage | VDSS | -60 | V |
Gate Source Voltage | VGS | ± 20 | V |
Continuous Drain CurrentVGS=10V; TA=25°C (a) VGS=10V; TA=70°C(b) VGS=10V; TA=25°C(d) |
ID | -1.1 -0.8 -0.9 |
A |
Pulsed Drain Current (c) | IDM | -4.0 | A |
Continuous Source Current (Body Diode) (b) | IS | -1.2 | A |
Pulsed source current (body diode) (c) | ISM | -4.0 | A |
Power Dissipation at TA=25°C (a) Linear Derating Factor |
PD | 625 5 |
W mW/°C |
Power Dissipation at TA=25°C (b) Linear Derating Factor |
PD | 806 6.5 |
W mW/°C |
Operating and Storage Temperature Range | Tj:Tstg | -55 to +150 | °C |
This new generation of trench MOSFETs of the ZXMP6A13F from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.