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ZXMP3F35N8

Features: •Low on-resistance•Low gate drive•SO8 packageApplication•Power management functions•Disconnect switches•Reverse battery protectionPinoutSpecifications Parameter Symbol Limit Unit Drain-Source voltage VDSS -30 V Gate-Source voltage VGS...

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SeekIC No. : 004552535 Detail

ZXMP3F35N8: Features: •Low on-resistance•Low gate drive•SO8 packageApplication•Power management functions•Disconnect switches•Reverse battery protectionPinoutSpecifications ...

ZXMP3F35N8 Data Sheet

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Part Number:
ZXMP3F35N8
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/24

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Product Details

Description



Features:

•Low on-resistance
•Low gate drive
•SO8 package




Application

•Power management functions
•Disconnect switches
•Reverse battery protection




Pinout

Connection Diagram




Specifications

Parameter Symbol Limit Unit
Drain-Source voltage VDSS -30 V
Gate-Source voltage VGS ±20 V
Continuous Drain current
@ VGS= -10V; TA=25(b)
 @ VGS= -10V; TA=70(b)
 @ VGS= -10V; TA=25(a)
 @ VGS= -10V; TL=25(d)		 ID -12.3
-9.9
-9.3
-17.1		 V
Pulsed Drain current (c) IDM -58 A
Continuous Source current (Body diode) (b) IS -4.9
Pulsed Source current (Body diode) (c) ISM -58
Power dissipation at TA =25(a)
Linear derating factor		 PD 1.56
12.5		 W
mW/°C
Power dissipation at TA =25(b)
Linear derating factor		 PD 2.8
22.2
Power dissipation at TL =25(d)
Linear derating factor		 PD 5.35
42.9
Operating and storage temperature range Tj, Tstg -55 to 150





Description

This new generation Trench MOSFET ZXMP3F35N8 from Zetex has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance making it ideal for battery protection and reverse connection applications




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