Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• Low profile SOIC packageApplication• Motor Drive• LCD backlightingPinoutSpecifications PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDSS -30 V Gate-Sou...
ZXMP3A17DN8: Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• Low profile SOIC packageApplication• Motor Drive• LCD backlightingPinout...
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PARAMETER | SYMBOL | LIMIT | UNIT |
Drain-Source Voltage | VDSS | -30 | V |
Gate-Source Voltage | VGS | 20 | V |
Continuous Drain Current@VGS=10V; TA=25C (b)(d) @VGS=10V; TA=70C (b)(d) @VGS=10V; TA=25C (a)(d) |
ID | -4.4 -3.6 -3.4 |
A A A |
Pulsed Drain Current (c) | IDM | -16.2 | A |
Continuous Source Current (Body Diode)(b) | IS | -2.5 | A |
Pulsed Source Current (Body Diode)(c) | ISM | -16.2 | A |
Power Dissipation at TA=25°C (a)(d) Linear Derating Factor |
PD | 1.25 10 |
W mW/°C |
Power Dissipation at TA=25°C (a)(e) Linear Derating Factor |
PD | 1.8 14 |
W mW/°C |
Power Dissipation at TA=25°C (b)(d) Linear Derating Factor |
PD | 2.1 17 |
W mW/°C |
Operating and Storage Temperature Range | Tj:Tstg | -55 to +150 | °C |
This new generation of TRENCH MOSFETs of the ZXMP3A17DN8 from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.