Features: • High voltage• Low on-resistance• Fast switching speed• Low gate drive• Low threshold• SOT23-5 package variant engineered to increase spacing between high voltage pins.Application• Active clamping of primary side MOSFETs in 48 volt DC-DC convert...
ZXMP2120E5: Features: • High voltage• Low on-resistance• Fast switching speed• Low gate drive• Low threshold• SOT23-5 package variant engineered to increase spacing between h...
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PARAMETER | SYMBOL | LIMIT | UNIT |
Drain-Source Voltage | VDSS | -200 | V |
Gate Source Voltage | VGS | ±20 | V |
Continuous Drain Current (VGS=10V; Tamb=25)(a) | ID | -122 | mA |
Pulsed Drain Current (c) | IDM | -0.7 | A |
Pulsed Source Current (Body Diode) (c) | ISM | -0.7 | A |
Power Dissipation at Tamb=25 (a) Linear Derating Factor |
PD | 0.75 6 |
W mW/ |
Operating and Storage Temperature Range | Tj:Tstg | -55 to +150 |
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
This 200V enhancement mode P-channel MOSFET ZXMP2120E5 provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high voltage circuits.
A 4 pin SOT223 version is also available (ZXMP2120G4).